i, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf linear power transistor BLW32 description n-p-n silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. the excellent d.c. dissipation properties for class-a operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. the combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. the transistor has a v4" capstan envelope with ceramic cap. quick reference data r.f. performance mode of operation class-a; linear amplifier ^vision mhz 860 860 vce v 25 25 ic ma 150 150 th c 70 25 dim<1> db -60 -60 p (ij o sync * ' w > 0,5 typ. 0,63 gp db > 11 typ. 12,2 note 1. three-tone test method (vision carrier -8 db, sound carrier -7 db, sideband signal -16 db), zero db corresponds to peak sync level. pin configuration pinning-sot122a. top view fig,1 simplified outline. sot122a. pin 1 2 3 4 description collector emitter base emitter n.i semi-c onduclors reserves the right in change test conditions, parameter limits mid packuge dimensions without notice information liirrmhej by nj scmi-c unducton it believed to he both accurate and reliable .it the lime of going to press. however semi-i ondiiuors assumes no responsibility for :>ny errors or oinfcsiuns jisojvcrcj in its use nj seim-4_oiii)im< rs en\:our:me vciil\n jnlo^hcets ;irei.tirrent before pine ins ?r uhf linear power transistor BLW32 ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (peak value); vbe = 0 vcesm open base vceo emitter-base voltage (open collector) vebo collector current d.c. or average |c (peak value); f > 1 mhz icm total power dissipation up to tmb = 25 c ptot storage temperature tstg operating junction temperature t max. max. max. 50 v 30 v 4 v max. 650 ma max. 1000 ma max. 10,8 w -65 to+150 c max. 200 c uhf linear power transistor BLW32 characteristics tj = 25 c unless otherwise specified collector-emitter breakdown voltage vbe = 0; lc = 2 ma open base; lc = 15 ma emitter-base breakdown voltage open collector; ie = 1 ma collector cut-off current vbe = 0; vce = 30 v d.c. current gain <1' |c = 150ma; vce = 25v lc = 150 ma; vce = 25 v; tj = 175 c collector-emitter saturation voltage <1) lc = 300 ma; ib = 30 ma transition frequency at f = 500 mhz <2> -ie = 1 50ma; vcb = 25v -ie = 300 ma; vcb = 25 v collector capacitance at f = 1 mhz ie = u = 0; vcb = 25 v feedback capacitance at f = 1 mhz lc = 10ma; vce = 25v collector-stud capacitance notes 1 . measured under pulse conditions: tp < 300 u.s; 6 < 0,02. 2. measured under pulse conditions; tp < 50 us; b < 0,01 . v(sr)ces v(br)ceo v (br)ebo ices ices vcesat ft ft > typ. 50 v 30 v 4 v 0,5 ma 1,2 ma 20 40 120 typ. 500 mv typ. 3,5 ghz typ. 3,4 ghz typ. 3,7 pf typ. 1,9 pf typ. 1,2 pf
ceramic ? ? ?, x / a 3 _j r m l - w _j scale 10 mm dimensions (millimetre dimensions are derived from the original inch dimensions) unit mm a 5.97 474 b 585 5.58 c 0.18 0.14 d 750 7.23 1 6.48 6.22 d2 7.24 6.93 h 27.56 25.78 l 9.91 9.14 mi 3.18 2.66 m 1.66 1.39 n 11.82 11.04 n! max. 1.02 n3 3,86 292 q 3.38 2.74 w 8-32 unc w1 0.381 a 90 outline version sot122a references iec jedec eiaj
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